Low Dimensional Semiconductor Structures

The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references.

Author: Keith Barnham

Publisher: Cambridge University Press

ISBN: 0521599040

Category: Science

Page: 408

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Low-Dimensional Semiconductor Structures provides a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication, their electronic, optical and transport properties, their role in exploring physical phenomena, and their utilization in devices. The authors begin with a detailed description of the epitaxial growth of semiconductors. They then deal with the physical behaviour of electrons and phonons in low-dimensional structures. A discussion of localization effects and quantum transport phenomena is followed by coverage of the optical properties of quantum wells. They then go on to discuss non-linear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references. It is suitable as a textbook for graduate-level courses in electrical engineering and applied physics. It will also be of interest to engineers involved in the development of semiconductor devices.
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Low Dimensional Semiconductor Structures

In its presentation of tutorial chapters as well as advanced research on nanostructures, this book is ideally suited to meet the needs of newcomers to the field as well as experienced researchers interested in viewing colleagues’ recent ...

Author: Hilmi Ünlü

Publisher: Springer Science & Business Media

ISBN: 9783642284236

Category: Science

Page: 162

View: 590

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Starting with the first transistor in 1949, the world has experienced a technological revolution which has permeated most aspects of modern life, particularly over the last generation. Yet another such revolution looms up before us with the newly developed capability to control matter on the nanometer scale. A truly extraordinary research effort, by scientists, engineers, technologists of all disciplines, in nations large and small throughout the world, is directed and vigorously pressed to develop a full understanding of the properties of matter at the nanoscale and its possible applications, to bring to fruition the promise of nanostructures to introduce a new generation of electronic and optical devices. The physics of low dimensional semiconductor structures, including heterostructures, superlattices, quantum wells, wires and dots is reviewed and their modeling is discussed in detail. The truly exceptional material, Graphene, is reviewed; its functionalization and Van der Waals interactions are included here. Recent research on optical studies of quantum dots and on the physical properties of one-dimensional quantum wires is also reported. Chapters on fabrication of nanowire – based nanogap devices by the dielectrophoretic assembly approach. The broad spectrum of research reported here incorporates chapters on nanoengineering and nanophysics. In its presentation of tutorial chapters as well as advanced research on nanostructures, this book is ideally suited to meet the needs of newcomers to the field as well as experienced researchers interested in viewing colleagues’ recent advances.
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Physics of Low Dimensional Semiconductor Structures

Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots.

Author: Paul N. Butcher

Publisher: Springer Science & Business Media

ISBN: 9781489924155

Category: Science

Page: 588

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Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots. It will serve as an invaluable reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering.
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Charge Transport in Low Dimensional Semiconductor Structures

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as ...

Author: Vito Dario Camiola

Publisher: Springer Nature

ISBN: 9783030359935

Category: Science

Page: 337

View: 639

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This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.
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Low dimensional Semiconductors

This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned.

Author: M. J. Kelly

Publisher: Clarendon Press

ISBN: 9780191590092

Category: Science

Page: 564

View: 744

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This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.
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Devices Based on Low Dimensional Semiconductor Structures

PREFACE The NATO-ASI on Devices Based on Low-Dimensional Structures
was planned as a part of a three-year program on Low Dimensional
Semiconductor Structures. The first year was focused on the fundamental
properties and ...

Author: M. Balkanski

Publisher: Springer Science & Business Media

ISBN: 9789400902893

Category: Science

Page: 406

View: 864

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Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.
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Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures

This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics.

Author: J.M. Chamberlain

Publisher: Springer Science & Business Media

ISBN: 9781468474121

Category: Science

Page: 490

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This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
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Low Dimensional Semiconductor Structures

This MRS Proceedings book contains the papers presented in Symposium 7E: "Low-Dimensional Semiconductor Structures" at XXII International Material Research Congress, IMRC 2013, and in Symposium 6B: "Low-Dimensional Semiconductor Structures" ...

Author: Tetyana V. Torchynska

Publisher: Materials Research Society

ISBN: 1605115940

Category: Technology & Engineering

Page: 237

View: 125

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This MRS Proceedings book contains the papers presented in Symposium 7E: "Low-Dimensional Semiconductor Structures" at XXII International Material Research Congress, IMRC 2013, and in Symposium 6B: "Low-Dimensional Semiconductor Structures" at XXI International Material Research Congress, IMRC 2012, which were held in Cancun, Mexico on August 11-15, 2013 and August 12-16, 2012, respectively.
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The Physics of Low dimensional Semiconductors

Beginning graduate introduction to low-dimensional systems and their applications.

Author: John H. Davies

Publisher: Cambridge University Press

ISBN: 052148491X

Category: Technology & Engineering

Page: 438

View: 271

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Beginning graduate introduction to low-dimensional systems and their applications.
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Advanced Electronic Technologies and Systems Based on Low Dimensional Quantum Devices

This volume on Advanced Electronic Technologies and Systems based on Low Dimensional Quantum Devices closes a three years series of NATO -AS!' s. The first year was focused on the fundamental properties and applications.

Author: M. Balkanski

Publisher: Springer Science & Business Media

ISBN: 0792348753

Category: Technology & Engineering

Page: 292

View: 356

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This volume on Advanced Electronic Technologies and Systems based on Low Dimensional Quantum Devices closes a three years series of NATO -AS!' s. The first year was focused on the fundamental properties and applications. The second year was devoted to Devices Based on Low-Dimensional Semiconductor Structures. The third year is covering Systems Based on Low-Dimensional Quantum Semiconductor Devices. The three volumes containing the lectures given at the three successive NATO -ASI's constitute a complete review on the latest advances in semiconductor Science and Technology from the methods of fabrication of the quantum structures through the fundamental physics am basic knowledge of properties and projection of performances to the technology of devices and systems. In the first volume: " Fabrication, Properties and Application of Low Dimensional Semiconductors" are described the practical ways in which quantum structures are produced, the present status of the technology, difficulties encountered, and advances to be expected. The basic theory of Quantum Wells, Double Quantum Wells and Superlattices is introduced and the fundamental aspects of their optical properties are presented. The effect of reduction of dimensionality on lattice dynamics of quantum structures is also discussed. In the second volume: " Devices Based on Low Dimensional Structures" the fundamentals of quantum structures and devices in the two major fields: Electro-Optical Devices and Pseudomorphic High Eectron Mobility Transistors are extensively discussed.
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Excitons in Low Dimensional Semiconductors

The book is clearly structured and will be valuable as an advanced-level self-study or course book for graduate students, lecturers, and researchers.

Author: Stephan Glutsch

Publisher: Springer Science & Business Media

ISBN: 3540202404

Category: Science

Page: 298

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The author develops the effective-mass theory of excitons in low-dimensional semiconductors and describes numerical methods for calculating the optical absorption including Coulomb interaction, geometry, and external fields. The theory is applied to Fano resonances in low-dimensional semiconductors and the Zener breakdown in superlattices. Comparing theoretical results with experiments, the book is essentially self-contained; it is a hands-on approach with detailed derivations, worked examples, illustrative figures, and computer programs. The book is clearly structured and will be valuable as an advanced-level self-study or course book for graduate students, lecturers, and researchers.
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Fabrication Properties and Applications of Low Dimensional Semiconductors

The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook.

Author: M. Balkanski

Publisher: Springer Science & Business Media

ISBN: 9789401100892

Category: Technology & Engineering

Page: 457

View: 655

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A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.
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Low dimensional Nitride Semiconductors

This text, written by topmost international researchers, is dedicated to low-dimensional nitride semiconductors, and provides the key to modern electronics, opto-electronics, and nanotechnology.

Author: Bernard Gil

Publisher: Oxford University Press on Demand

ISBN: 019850974X

Category: Science

Page: 467

View: 225

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Optoelectronics and electronics are likely to change dramatically in the future. This text, written by topmost international researchers, is dedicated to low-dimensional nitride semiconductors, and provides the key to modern electronics, opto-electronics, and nanotechnology. Low-Dimensional Nitride Semiconductors explores why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, andwhat the prospects of new electronic devices are in the dawn of the twenty-first century. Published in the Series on Semiconductor Science and Technology, with 'Group III Nitride Semiconductor Compounds' (OUP 1998).
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Low dimensional Semiconductor Heterostructures and Device Applications in Optoelectronics and Renewable Energy

"The development of high efficiency optoelectronic devices operating in the ultraviolet (UV) range, especially UV-C band (200 – 280 nm), has been fundamentally limited by large dislocation densities and poor p-type conduction in AlGaN ...

Author: Hong Tran

Publisher:

ISBN: OCLC:1198434135

Category:

Page:

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"The development of high efficiency optoelectronic devices operating in the ultraviolet (UV) range, especially UV-C band (200 – 280 nm), has been fundamentally limited by large dislocation densities and poor p-type conduction in AlGaN planar heterostructures grown on lattice mismatched substrates. By employing nanowire heterostructures using molecular beam epitaxy (MBE) technique, the crystalline quality and p-doping in group III-nitride materials can be significantly improved. In this dissertation, we have elucidated that the unusually high room-temperature hole concentrations up to ~6 ́ 1017 cm-3 measured in Mg-doped AlN nanowires stem from the efficient hole hopping conduction in the Mg impurity band, driven by the significantly enhanced Mg-dopant incorporation in nearly defect-free AlN nanostructures. Detailed temperature- and gate-dependent studies of AlN nanowire transistors reveal the distinct signatures of hole hopping conduction in the Mg impurity band, which include a relatively small activation energy for electrical conductivity and an increase in hole mobility with temperature.In visible and near-infrared wavelength range, we also study two-dimensional layered transition metal dichalcogenides (TMDCs), which have emerged as an excellent candidate for flexible and transparent optoelectronic devices. We first investigate the quantum efficiency of monolayer MoS2 via detailed temperature- and power-dependent photoluminescence studies. From rate equation analysis, the maximum achievable internal quantum efficiencies in monolayer MoS2 at 83 and 300 K are determined to be 45% and 8.3%, respectively. Noticeably, efficiency droop is clearly observed at high carrier injection concentrations due to the unusually large Auger recombination coefficient, which is calculated to be ~10-24 cm6/s at room temperature, nearly 6 orders of magnitude higher than that of conventional bulk semiconductors. In contrast, four-layer MoS2 exhibits much weaker efficiency droop, and is therefore used to fabricate, for the first time, room-temperature laser devices with a remarkably low threshold power of ~5 mW under continuous wave operation.We have further exploited the application of III-nitride nanowire heterostructures in the field of renewable energy, specifically hydrogen production, and demonstrated large-scale photocatalytic water splitting under concentrated natural sunlight. The synthesis of double-band p-GaN/InGaN nanowire arrays on large Si substrate (3” in diameter) by MBE has been studied and resulted in an apparent quantum efficiency up to ~28.8% in the visible range of 400 – 480 nm. Consequently, a solar-to-hydrogen energy conversion efficiency of ~1.1% can be derived under concentrated natural sunlight. The achievement brings us one step closer towards a large-scale practical hydrogen fuel generation system"--
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Perspectives in Quantum Hall Effects

This volume covers key experimental and theoretical developments in quantum Hall phenomena, focusing on the exciting developments of the past decade--a period that saw the field transform into one of physics' most prolific and dynamic ...

Author: Sankar Das Sarma

Publisher: John Wiley & Sons

ISBN: 9783527617265

Category: Science

Page: 444

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The discovery of the quantized and fractional Quantum Hall Effect phenomena is among the most important physics findings in the latter half of this century. The precise quantization of the electrical resistance involved in the quantized Hall effect phenomena has led to the new definition of the resistance standard and has metrologically affected all of science and technology. This resource consists of contributions from the top researchers in the field who present recent experimental and theoretical developments. Each chapter is self-contained and includes its own set of references guiding readers to original papers and further reading on the topic.
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Optical Spectroscopy of Low Dimensional Semiconductors

Such structures led to novel applications like low noise high frequency
modulation doped field effect transistors and quantum well lasers .
Semiconductor heterostructures of lower dimensionality like quantum wires and
quantum dots are not ...

Author: G. Abstreiter

Publisher: Springer

ISBN: UCSD:31822025756362

Category: Science

Page: 386

View: 874

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Optical Spectroscopy of Low Dimensional Semiconductors covers basic physical aspects, novel technology and material fabrication tools, characterization methods and new devices, with special emphasis on quantum wire and quantum dot lasers. Recent advances in special epitaxial growth techniques, especially on patterned substrates, are remarkable, allowing the fabrication of well defined one- and zero-dimensional semiconductor systems. In addition to self-ordered quantum dots in a variety of materials other major topics include V-groove quantum wires, cleaved edge overgrowth, micro-cavities, electronic excitations in low dimensional systems, phonons and dissipative transport in nanostructures. Most of the papers cover III-V semiconductors, but Group IV and II-VI semiconductor microstructures are also covered. Theoretical papers are included on growth kinetics and the electronic properties of low dimensional structures, including many-particle effects.
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Quantum Wells

This invaluable book is devoted to the physics, technology and device applications of semiconductor structures with ultrathin layers where the electronic properties are governed by the quantum-mechanical laws.

Author: Alexander Y. Shik

Publisher: World Scientific

ISBN: 9810232799

Category: Science

Page: 96

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This invaluable book is devoted to the physics, technology and device applications of semiconductor structures with ultrathin layers where the electronic properties are governed by the quantum-mechanical laws. Such structures called quantum wells or structures with the two-dimensional electron gas, have become one of the most actively investigated objects in modern solid state physics. Electronic properties of quantum wells differ dramatically from those of bulk semiconductors, which allows one to observe new types of physical phenomena, such as the quantum Hall effect and many other so-far-unknown kinetic and optical effects. This, in turn, offers wide opportunities for creating semiconductor devices based on new principles, and it has give birth to the new branch of electronics called nanoelectronics.
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Impurities Confined in Quantum Structures

In this book, the progress on elucidating the physical properties of impurities confined in quantum structures are reviewed with an emphasis on the experimental aspects.

Author: Olof Holtz

Publisher: Springer Science & Business Media

ISBN: 9783642186578

Category: Science

Page: 139

View: 797

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The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.
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Electron Spin Resonance and Related Phenomena in Low Dimensional Structures

Here is a discussion of the state of the art of spin resonance in low dimensional structures, such as two-dimensional electron systems, quantum wires, and quantum dots.

Author: Marco Fanciulli

Publisher: Springer Science & Business Media

ISBN: 9783540793656

Category: Science

Page: 261

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Here is a discussion of the state of the art of spin resonance in low dimensional structures, such as two-dimensional electron systems, quantum wires, and quantum dots. Leading scientists report on recent advances and discuss open issues and perspectives.
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