Silicon Germanium Carbon Alloys

A substitutional C defect in a SiGe alloy is expected to be surrounded by an even stronger strain field than in pure silicon , due to ... where the thermal stability of substitutional carbon in Sil - x - yGe , Cy alloys was measured .

Author: S. Pantellides

Publisher: CRC Press

ISBN: 1560329637

Category: Technology & Engineering

Page: 560

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Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
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Plasma Deposition of Amorphous Silicon Based Materials

That is, carbon etches more easily than silicon, which measures more easily than germanium. These considerations explain the observed shift in alloy composition as function of dilution (when the ratios of silicon and alloy gas sources ...

Author: Pio Capezzuto

Publisher: Elsevier

ISBN: 9780080539102

Category: Science

Page: 324

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Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
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Handbook of Thin Films Five Volume Set

Si surfaces, 2 spectrum of c-Si at room temperature, 10 Pulsed surface photovoltage, 6–9 Pump-probe absorption ... 278 Silicon and silicon/germanium thin films, carbon-containing heteroepitaxial, 247–290 Siliconcarbon alloys, strained, ...

Author: Hari Singh Nalwa

Publisher: Elsevier

ISBN: 9780080533247

Category: Technology & Engineering

Page: 3451

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This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.
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Thin Film Silicon Solar Cells

2.7 AMORPHOUS SILICON - GERMANIUM AND SILCON - CARBON ALLOYS ( by Wolfhard Beyer ) 2.7.1 Introduction Amorphous alloys of silicon with two other elements of group IV A ( carbon group ) of the periodic table ( see Fig .

Author: Arvind Shah

Publisher: EPFL Press

ISBN: 1420066749

Category: Science

Page: 472

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This text provides a comprehensive treatment of thin-film silicon as a semiconductor material. Beginning with fundamental physical properties, it concentrates on device applications, solar cells in particular. Intended for students & professional scientists, it presents the concepts required for understanding thin-film electronics.
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Silicon Heterostructure Devices

It is technically correct to refer to silicon - germanium alloys according to their chemical composition ... to as a SiGe : C alloy , or simply SiGeC ( pronounced “ silicon germanium carbon , ” not “ silicon germanium carbide ” ) .

Author: John D. Cressler

Publisher: CRC Press

ISBN: 9781420066913

Category: Technology & Engineering

Page: 472

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SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
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Measurement and Modeling of Silicon Heterostructure Devices

It is technically correct to refer to silicongermanium alloys according to their chemical composition, Si 1Àx Gex ... in HBTs) is properly referred to as a SiGe:C alloy, or simply SiGeC (pronounced ''silicon germanium carbon,'' not ...

Author: John D. Cressler

Publisher: CRC Press

ISBN: 9781420066937

Category: Technology & Engineering

Page: 200

View: 851

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When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
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